amplifiers - low noise - chip 1 1 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC462 gaas phemt mmic low noise amplifier, 2 - 20 ghz v04.1210 general description features functional diagram the hm c462 is a gaas mmi c phem t l ow n oise distributed amplifer die which operates between 2 and 20 g h z. the amplifer provides 15 db of gain, 2.0 to 2.5 db noise fgure and +15 dbm of output power at 1 db gain compression while requiring only 63 ma from a single +5v supply. gain fatness is excellent at 0.5 db from 6 - 18 g h z making the hm c462 ideal for ew , e c m and r ada r applications. the hm c462 requires a single supply of +5v @ 63 ma and is the self-biased version of the hm c463. the wideband amplifer i / o s are internally matched to 50 o hms facilitating easy integration into m ulti-chip- m odules ( m c m s). all data is with the chip in a 50 o hm test fxture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). n oise f igure: 2 db @ 10 g h z gain: 15 db p 1db o utput p ower: +15 dbm @ 10 g h z s elf-biased: +5v @ 63 ma 50 o hm m atched i nput/ o utput die s ize: 3.12 x 1.38 x 0.1 mm typical applications the hm c462 w ideband ln a is ideal for: ? telecom i nfrastructure ? m icrowave r adio & v s at ? m ilitary & s pace ? test i nstrumentation ? f iber o ptics electrical specifcations, t a = +25 c, vdd= 5v p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange 2.0 - 6.0 6.0 - 18.0 18.0 - 20.0 g h z gain 13.5 15.5 13 15 12 14 db gain f latness 0.5 0.5 0.5 db gain variation o ver temperature 0.015 0.025 0.015 0.025 0.015 0.025 db/ c n oise f igure 3.0 4.0 2.5 3.5 3.0 3.7 db i nput r eturn l oss 15 20 14 db o utput r eturn l oss 12 13 8 db o utput p ower for 1 db compression ( p 1db) 12.5 15.5 11 14 9.5 12.5 dbm s aturated o utput p ower ( p sat) 18 16 15.5 dbm o utput third o rder i ntercept ( ip 3) 26.5 25.5 24 dbm s upply current ( i dd) (vdd= 5v) 63 84 63 84 63 84 ma
amplifiers - low noise - chip 1 1 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com noise figure vs. temperature gain vs. temperature output return loss vs. temperature gain & return loss reverse isolation vs. temperature input return loss vs. temperature 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c gain (db) frequency (ghz) -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c noise figure (db) frequency (ghz) -30 -20 -10 0 10 20 0 4 8 12 16 20 24 s21 s11 s22 response (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c return loss (db) frequency (ghz) HMC462 v04.1210 gaas phemt mmic low noise amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com p1db vs. temperature psat vs. temperature output ip3 vs. temperature gain, power, noise figure & supply current vs. supply voltage @ 10 ghz 5 8 11 14 17 20 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c p1db (dbm) frequency (ghz) 10 13 16 19 22 25 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c psat (dbm) frequency (ghz) 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -40c ip3 (dbm) frequency (ghz) 0 4 8 12 16 20 54 58 62 66 70 74 4.5 5 5.5 6 6.5 7 7.5 8 gain p1db noise figure idd gain (db), p1db (dbm), noise figure (db) idd (ma) vdd supply voltage (vdc) absolute maximum ratings drain bias voltage (vdd) +9 vdc rf i nput p ower ( rfin )(vdd = +5 vdc) +18 dbm channel temperature 175 c continuous p diss (t = 85 c) (derate 50 m w /c above 85 c) 4.5 w thermal r esistance (channel to die bottom) 41 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) i dd (ma) +4.5 62 +5.0 63 +5.5 64 +7.0 65 +7.5 66 +8.0 67 typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions HMC462 v04.1210 gaas phemt mmic low noise amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no t es : 1. a ll d imensions in in c hes [ millime t ers ] 2. no c onne ct ion re qu ire d for u nl ab ele d b on d p ad s 3. d ie t hi ck ness is 0.004 (0.100) 4. ty pi ca l b on d p ad is 0.004 (0.100) s qua re 5. back si d e me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d 7. b on d p ad me ta li zat ion : g ol d p ad n umber f unction description i nterface s chematic 1 rfin this pad is ac coupled and matched to 50 o hms. 2 vdd p ower supply voltage for the amplifer. e xternal bypass capacitors are required 3 rfo ut this pad is ac coupled and matched to 50 o hms. die bottom g n d die bottom must be connected to rf /dc ground. pad descriptions die packaging information [1] s tandard alternate g p -2 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC462 v04.1210 gaas phemt mmic low noise amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC462 v04.1210 gaas phemt mmic low noise amplifier, 2 - 20 ghz
amplifiers - low noise - chip 1 1 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protective containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab HMC462 v04.1210 gaas phemt mmic low noise amplifier, 2 - 20 ghz
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